| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 5A, 6V |
| Vgs(th) (Max) @ Id | 2.6V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V |
| Vgs (Max) | +6V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Package / Case | 8-PowerVDFN |
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