| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TUMT3 |
| Package / Case | 3-SMD, Flat Leads |
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