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STN6N60M2

¥5.04
单 FET、MOSFET

MOSFET N-CH 600V 5.5A SOT223-2

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.25Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 100 V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223-2
Package / CaseTO-261-3

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STMicroelectronics 单 FET、MOSFET 产品 STN6N60M2

作为STMicroelectronics优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购STN6N60M2时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买STN6N60M2绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解STN6N60M2产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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