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HS8MA2TCR1

¥7.63
FET、MOSFET 阵列

30V DUAL COMMON DRAIN PCH+NCH PO

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 7A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds320pF @ 10V, 365pF @ 10V
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerWDFN
Supplier Device PackageDFN3333-9DC

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ROHM Semiconductor FET、MOSFET 阵列 产品 HS8MA2TCR1

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