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UT6ME5TCR

¥4.68
FET、MOSFET 阵列

100V 2.0A/1.0A, DUAL NCH+PCH, DF

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2A (Ta), 1A (Ta)
Rds On (Max) @ Id, Vgs207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.8nC @ 10V, 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 50V
Power - Max2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-PowerUDFN
Supplier Device PackageHUML2020L8

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