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QS8M12TCR

¥2.72
FET、MOSFET 阵列

MOSFET N/P-CH 30V 4A TSMT8

参数名称参数值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs42mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs3.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 10V
Power - Max1.5W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

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