参数名称 | 参数值 |
---|---|
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 30A |
Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
Power - Max | 125W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | i4-Pac™-5 |
Supplier Device Package | ISOPLUS i4-PAC™ |
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