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CSD86311W1723

¥3.15
FET、MOSFET 阵列

MOSFET 2N-CH 25V 4.5A 12DSBGA

参数名称参数值
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs39mOhm @ 2A, 8V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds585pF @ 12.5V
Power - Max1.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case12-UFBGA, DSBGA
Supplier Device Package12-DSBGA

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Texas Instruments FET、MOSFET 阵列 产品 CSD86311W1723

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