| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 26A, 17A |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2720pF @ 25V |
| Power - Max | 125W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package/ Case | i4-Pac™-5 |
| Supplier Device Package | ISOPLUS i4-PAC™ |
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