| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 50 µA @ 1.2 kV |
| Capacitance @ Vr, F | 481pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package/ Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Bourns, Inc. 单二极管 产品 BSDH10G120E2
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